inchange semiconductor product specification silicon npn power transistors BU2520D description ? with to-3pn package ? high voltage,high speed ? built-in damper diode applications ? for use in horizontal def lection circuits of large screen colour tv receivers. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7.5 v i c collector current (dc) 10 a i cm collector current-peak 25 a i b base current(dc) 6 a i bm base current-peak 9 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU2520D characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 800 v v (br)ebo emitter-base breakdown voltage i b =600ma; i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 5.0 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.3 v i ces collector cut-off current v ce =ratedv ce ; v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 100 300 ma h fe-1 dc current gain i c =1a ; v ce =5v 23 h fe-2 dc current gain i c =6a ; v ce =5v 5 7 10 v f diode forward voltage i f =6a 2.2 v c c collector capacitance i e =0 ;v cb =10v;f=1mhz 115 pf
inchange semiconductor product specification 3 silicon npn power transistors BU2520D package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
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